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EPC2012C

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Refrence Price

  • 1

    $4.011040

  • 10

    $3.503192

  • 30

    $3.201792

  • 100

    $2.896256

  • 500

    $2.755016

  • 1000

    $2.691216

EPC2012C

Manufacturer's Part #
 EPC2012C
Manufacturer
 EPC
Categories
 Uncategorized
Sub-Categories
 Unclassified
Series
 DSH
ECAD Model
 componentsearchengine
Description
 GaN Transistors(GaN HEMT) ROHS
Datasheet
 pdfEPC2012C.pdf

number:

unit-price:

$4.011040

Total price: $4.011040

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Product Parameter

TypeDescription
SerieseGaN?
Product StatusActive
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 5V
Gate Charge (Qg) (Max) @ Vgs1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 100 V
Power Dissipation (Max)-
Mounting TypeSurface Mount
Package / CaseDie
  
PackageTape & Reel (TR)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)+6V, -4V
FET Feature-
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageDie Outline (4-Solder Bar)
PackageTape & Reel (TR)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)+6V, -4V
FET Feature-
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageDie Outline (4-Solder Bar)
PackageTape & Reel (TR)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)+6V, -4V
FET Feature-
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageDie Outline (4-Solder Bar)
Shopping Guide
Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


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