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G3S12010A

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    $17.86000

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G3S12010A

Manufacturer's Part #
 G3S12010A
Manufacturer
 Global Power Technology-GPT
Categories
 Discrete Semiconductor Products
Sub-Categories
 Diodes - Rectifiers - Single
Series
 DSH
ECAD Model
 componentsearchengine
Description
 SIC SCHOTTKY DIODE 1200V 10A 2-P
Datasheet
 pdfG3S12010A.pdf

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$17.86000

Total price: $17.86000

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Product Parameter

TypeDescription
Series-
Product StatusActive
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Reverse Recovery Time (trr)0 ns
Capacitance @ Vr, F770pF @ 0V, 1MHz
Package / CaseTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
  
PackageCut Tape (CT)
Diode TypeSilicon Carbide Schottky
Current - Average Rectified (Io)34.8A
SpeedNo Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr50 μA @ 1200 V
Mounting TypeThrough Hole
Supplier Device PackageTO-220AC
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Shipping Rate

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