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TP65H015G5WS

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  • 1

    $21.722360

  • 200

    $8.406288

  • 500

    $8.111664

  • 1000

    $7.964968

TP65H015G5WS

Manufacturer's Part #
 TP65H015G5WS
Manufacturer
 Transphorm
Categories
 Uncategorized
Sub-Categories
 Unclassified
Series
 DSH
ECAD Model
 componentsearchengine
Description
 TO-247-3 GaN Transistors(GaN HEMT) ROHS
Datasheet
 pdfTP65H015G5WS.pdf

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unit-price:

$21.722360

Total price: $21.722360

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Product Parameter

TypeDescription
Drain Source Breakdown Voltage650V
Transistor Type1 N-Channel
Operating Temperature-55℃~+150℃
Power Dissipation266W
Continuous Drain Current93A
Drain Source On-State Resistance18mΩ
SeriesSuperGaN?
Product StatusActive
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C93A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5218 pF @ 400 V
Power Dissipation (Max)266W (Tc)
Mounting TypeThrough Hole
Package / CaseTO-247-3
  
PackageTube
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4.8V @ 2mA
Vgs (Max)±20V
FET Feature-
Operating Temperature-55°C ~ 150°C (TJ)
Supplier Device PackageTO-247-3
Shopping Guide
Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


Payment
Payment

TT in advance (bank transfer), Western Union, PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.